Title :
High precision comparison of quantized Hall resistances
Author :
Nagashima, N. ; Kawaji, S. ; Data, M. ; Wakabayashi, J. ; Yoshihiro, K. ; Kinoshita, J. ; Inagaki, K. ; Yamanouchi, C.
Author_Institution :
Dept. of Phys., Gakushuin Univ., Tokyo, Japan
Abstract :
Relative values of quantized Hall resistances R/sub H/(i) have been measured on the plateaus of i=4 and 2 for a GaAs/AlGaAs heterostructure device under the complete quantization condition and compared with each other. The value of 4*R/sub H/(4) differs appreciably from the value of 2*R/sub H/(2). This result suggests a possible deviation of i*R/sub H/(i) from the universal value h/e/sup 2/.<>
Keywords :
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; p-n heterojunctions; quantum Hall effect; GaAs-AlGaAs; III-V semiconductors; heterostructure device; quantized Hall resistances; Control systems; Current measurement; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; Magnetic field measurement; Measurement standards; Microcomputers; Potentiometers; Switches;
Conference_Titel :
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location :
Ottawa, Ontario, Canada
DOI :
10.1109/CPEM.1990.110035
