Title :
Comparison of the quantized Hall resistance in different GaAs/AlGaAs heterostructures
Author :
Jeckelmann, Beat ; Schwitz, W. ; Buhlmann, H.J. ; Houdre, R. ; Ilegems, M. ; Jucknischke, D. ; Py, M.
Author_Institution :
Swiss Federal Office of Metrol., Bern, Switzerland
Abstract :
GaAs/AlGaAs heterostructures with mobilities varying between 15 and 50 T/sup -1/ have been successfully fabricated and contacted. The quantized Hall resistances of seven different samples have been compared with an uncertainty of less than 1 part in 10/sup 8/ using a potentiometric measurement system. Preliminary results for the relative differences of the QHR measured on three different GaAs samples are shown. No sample dependence has been found at a precision level of 1 part in 10/sup 8/.<>
Keywords :
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; GaAs-AlGaAs; III-V semiconductors; heterostructures; potentiometric measurement; quantized Hall resistance; Bridges; Current measurement; Electrical resistance measurement; Fabrication; Gallium arsenide; Hall effect; Molecular beam epitaxial growth; Temperature; Thermal resistance; Time measurement;
Conference_Titel :
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location :
Ottawa, Ontario, Canada
DOI :
10.1109/CPEM.1990.110036
