Title :
Combined altitude and underground real-time SER characterization of CMOS technologies on the ASTEP-LSM platform
Author :
Autran, J.L. ; Roche, P. ; Sauze, S. ; Gasiot, G. ; Munteanu, D. ; Loaiza, P. ; Zampaolo, M. ; Borel, J. ; Rozov, S. ; Yakushev, E.
Author_Institution :
Inst. of Mater., Microelectron. & Nanosci. of Provence (IM2NP, UMR CNRS 6242), Aix-Marseille Univ., Marseille, France
Abstract :
This work surveys our 2005-2009 experimental contributions to develop a combined altitude and underground test platform devoted to the soft-error rate (SER) characterization of deca-nanometer CMOS technologies. The platform currently involves two complementary sites to separate the component of the SER induced by the cosmic rays from that caused by on-chip radioactive impurities: the Altitude SEE Test European Platform (ASTEP) located at the altitude of 2252 m on the Plateau de Bure (French south Alps) and the Underground Laboratory of Modane (LSM) in the Frejus tunnel under 1700 m of rock (4800 meters water equivalent). These two sites have both dedicated instrumentations for neutron monitoring and circuit SER characterization. Long-duration real-time experimental measurements obtained using several gigabits of SRAMs manufactured in CMOS 130 nm and 65 nm technologies are reported and analyzed.
Keywords :
CMOS integrated circuits; SRAM chips; impurities; integrated circuit testing; nanotechnology; neutron effects; radiation hardening (electronics); ASTEP-LSM platform; SRAM; altitude test platform; decananometer CMOS technology; neutron monitoring; onchip radioactive impurities; size 130 nm; size 65 nm; soft error rate characterization; underground test platform; CMOS technology; Circuit testing; Contamination; Cosmic rays; Impurities; Laboratories; Microelectronics; Nanostructured materials; Neutrons; Performance evaluation; SER simulation; Single-Event Rate (SER); accelerated tests; alpha contamination; atmospheric neutrons; neutron-induced SER; real-time testing; static memory; terrestrial radiation environment;
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
DOI :
10.1109/ICICDT.2009.5166277
