DocumentCode
2563271
Title
Industrial experience with a quantized Hall effect system
Author
Jaeger, K.B. ; Levine, P.D. ; Zack, C.A.
Author_Institution
Lockheed Missiles & Space Co. Inc., Sunnyvale, CA, USA
fYear
1990
fDate
11-14 June 1990
Firstpage
313
Lastpage
314
Abstract
In an effort to create the capability for the primary calibration of standard resistors traceable to physical constants, a measuring system based on the quantized Hall effect was assembled at Lockheed Missiles and Space Co. during the fall of 1989. Preliminary studies have been performed using three different samples of modulation-doped GaAs-(AlGa)As heterojunctions prepared by beam epitaxy techniques. The results of studies performed with one of these samples at the n=4 plateau are reported. These measurements were compared to results on a 10-k Omega primary resistor whose value is directly traceable to the US National Institute of Standards and Technology.<>
Keywords
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; measurement standards; p-n heterojunctions; quantum Hall effect; resistors; 10 kohm; GaAs-AlGaAs heterojunction; beam epitaxy; electric resistance measurement; modulation doped heterojunction; physical constants; primary calibration; primary resistor; quantized Hall effect; standard resistors; Assembly systems; Calibration; Epitaxial growth; Epitaxial layers; Hall effect; Heterojunctions; Measurement standards; Missiles; Molecular beam epitaxial growth; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location
Ottawa, Ontario, Canada
Type
conf
DOI
10.1109/CPEM.1990.110038
Filename
110038
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