• DocumentCode
    2563271
  • Title

    Industrial experience with a quantized Hall effect system

  • Author

    Jaeger, K.B. ; Levine, P.D. ; Zack, C.A.

  • Author_Institution
    Lockheed Missiles & Space Co. Inc., Sunnyvale, CA, USA
  • fYear
    1990
  • fDate
    11-14 June 1990
  • Firstpage
    313
  • Lastpage
    314
  • Abstract
    In an effort to create the capability for the primary calibration of standard resistors traceable to physical constants, a measuring system based on the quantized Hall effect was assembled at Lockheed Missiles and Space Co. during the fall of 1989. Preliminary studies have been performed using three different samples of modulation-doped GaAs-(AlGa)As heterojunctions prepared by beam epitaxy techniques. The results of studies performed with one of these samples at the n=4 plateau are reported. These measurements were compared to results on a 10-k Omega primary resistor whose value is directly traceable to the US National Institute of Standards and Technology.<>
  • Keywords
    III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; measurement standards; p-n heterojunctions; quantum Hall effect; resistors; 10 kohm; GaAs-AlGaAs heterojunction; beam epitaxy; electric resistance measurement; modulation doped heterojunction; physical constants; primary calibration; primary resistor; quantized Hall effect; standard resistors; Assembly systems; Calibration; Epitaxial growth; Epitaxial layers; Hall effect; Heterojunctions; Measurement standards; Missiles; Molecular beam epitaxial growth; Resistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
  • Conference_Location
    Ottawa, Ontario, Canada
  • Type

    conf

  • DOI
    10.1109/CPEM.1990.110038
  • Filename
    110038