DocumentCode
2563276
Title
A 2.5 GHz radiation hard fully self-biased PLL using 0.25 µm SOS-CMOS technology
Author
Ghosh, Partha Pratim ; Xiao, E.
Author_Institution
Electr. Eng. Dept., Univ. of Texas, Arlington, TX, USA
fYear
2009
fDate
18-20 May 2009
Firstpage
121
Lastpage
124
Abstract
This paper presents a radiation hard PLL using 0.25 mum SOS-CMOS technology for space applications. This PLL is fully self-biased and gives output frequency of 2.5 GHz. This robust PLL successfully performs for all the process corners from -40degC to 80degC under Cadence-SpectreRF schematic and layout simulations. A new modification has been done on the differential buffers of the VCO used in the PLL to reduce phase noise. Simulation results from extracted layout including buffers and pads are enlisted for pre and post radiation environments.
Keywords
CMOS integrated circuits; phase locked loops; phase noise; radiation hardening (electronics); voltage-controlled oscillators; Cadence-SpectreRF schematic simulation; SOS-CMOS technology; VCO; differential buffers; frequency 2.5 GHz; layout simulation; phase noise; radiation hard fully self-biased PLL; size 0.25 mum; space application; temperature -40 degC to 80 degC; Bandwidth; CMOS technology; Charge carrier processes; Digital circuits; Frequency; MOSFETs; Phase locked loops; Silicon; Space technology; Voltage; CMOS; PLL; Rad-Hard; SOS - Silicon on Sapphire; Self-bias;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location
Austin, TX
Print_ISBN
978-1-4244-2933-2
Electronic_ISBN
978-1-4244-2934-9
Type
conf
DOI
10.1109/ICICDT.2009.5166278
Filename
5166278
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