• DocumentCode
    2563276
  • Title

    A 2.5 GHz radiation hard fully self-biased PLL using 0.25 µm SOS-CMOS technology

  • Author

    Ghosh, Partha Pratim ; Xiao, E.

  • Author_Institution
    Electr. Eng. Dept., Univ. of Texas, Arlington, TX, USA
  • fYear
    2009
  • fDate
    18-20 May 2009
  • Firstpage
    121
  • Lastpage
    124
  • Abstract
    This paper presents a radiation hard PLL using 0.25 mum SOS-CMOS technology for space applications. This PLL is fully self-biased and gives output frequency of 2.5 GHz. This robust PLL successfully performs for all the process corners from -40degC to 80degC under Cadence-SpectreRF schematic and layout simulations. A new modification has been done on the differential buffers of the VCO used in the PLL to reduce phase noise. Simulation results from extracted layout including buffers and pads are enlisted for pre and post radiation environments.
  • Keywords
    CMOS integrated circuits; phase locked loops; phase noise; radiation hardening (electronics); voltage-controlled oscillators; Cadence-SpectreRF schematic simulation; SOS-CMOS technology; VCO; differential buffers; frequency 2.5 GHz; layout simulation; phase noise; radiation hard fully self-biased PLL; size 0.25 mum; space application; temperature -40 degC to 80 degC; Bandwidth; CMOS technology; Charge carrier processes; Digital circuits; Frequency; MOSFETs; Phase locked loops; Silicon; Space technology; Voltage; CMOS; PLL; Rad-Hard; SOS - Silicon on Sapphire; Self-bias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4244-2933-2
  • Electronic_ISBN
    978-1-4244-2934-9
  • Type

    conf

  • DOI
    10.1109/ICICDT.2009.5166278
  • Filename
    5166278