Title :
Quantum Hall samples prepared by helium-ion implantation
Author :
Bruus, H. ; Lindelof, P.E. ; Veje, E.
Author_Institution :
Danish Inst. of Fundamental Metrol., Lyngby, Denmark
Abstract :
GaAs/GaAlAs heterostructure-based quantum Hall samples with a wide range of electron mobilities have been produced using ion implantation. The purpose was to optimize the samples for use in metrology. In particular, the critical current and the nonohmic behavior of the samples in the vicinity of a quantum Hall plateau were studied.<>
Keywords :
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; helium; ion implantation; measurement standards; p-n heterojunctions; quantum Hall effect; GaAs-GaAlAs; I-V characteristics; III-V semiconductors; critical current; electron mobilities; heterostructure; ion implantation; nonohmic behavior; quantum Hall effect; Calibration; Critical current; Electric resistance; Electrical resistance measurement; Electron mobility; Gallium arsenide; Laboratories; Metrology; Wire; Wounds;
Conference_Titel :
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location :
Ottawa, Ontario, Canada
DOI :
10.1109/CPEM.1990.110039
