ZnO thin films formed from ZnN target by RF sputtering: From materials to devices

Author

Kampylafka, V. ; Kostopoulos, A. ; Androulidaki, M. ; Tsagaraki, K. ; Modreanu, M. ; Aperathitis, E.

Author_Institution

Microelectron. Res. Group, Inst. of Electron. Struct. & Laser, Heraklion, Greece

Volume

2

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

279

Lastpage

282

Abstract

In this work a single ZnN sputtering target was used to fabricate n-and p-type transparent films, namely: (a) n-ZnN thin films in pure Ar plasma and (b) p-ZnO:N films in Ar-O₂ plasma. The structural, optical and electrical properties of the films were investigated. Zinc nitride films deposited in pure Ar were n-type, with low resistivity. Films deposited in more than 40% O₂ in plasma were p-type ZnO films. A thin film transistor having zinc nitride as channel layer as well as n-ZnN/p-ZnO and p/n ZnO diodes in a single deposition run were fabricated and characterized.

Keywords

II-VI semiconductors; electrical resistivity; infrared spectra; nitrogen; semiconductor thin films; sputter deposition; ultraviolet spectra; wide band gap semiconductors; zinc compounds; RF sputtering; UV-NIR spectrum; ZnN; ZnO:N; electrical properties; electrical resistivity; optical properties; p-type transparent films; structural properties; thin film transistor; thin films; Annealing; Argon; Conductivity; Films; Plasmas; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095792

Filename

6095792