DocumentCode :
2563319
Title :
Suppressing the polarization effect in high temperature conditions for an In/CdTe/Pt detector
Author :
Seino, Takehisa ; Takahashi, Isao ; Ishitsu, T. ; Yokoi, Katsutaka ; Kobashi, Keiji
Author_Institution :
Central Res. Lab., Hitachi., Ltd., Kokubunji, Japan
fYear :
2012
fDate :
Oct. 27 2012-Nov. 3 2012
Firstpage :
4222
Lastpage :
4225
Abstract :
CdTe diode detectors have an instability called "polarization effect". The polarization makes difficult maintaining the performances of CdTe detectors without some depolarization methods in high temperature conditions. The technique of periodical turning off the bias voltage has been developed to depolarize the detector (called "refreshing"). The refreshing periods and the pulsed off times were investigated to maintain the spectral performance in the temperature range of 50°C to 70 °c. The energy resolutions for a 662 keY photo peak were evaluated. The bias voltage of -600 V was applied to the 9.7 × 5 × 2.2 mm, In/CdTe/Pt planar detector. The higher temperature required the shorter refreshing period to obtain good energy resolutions. When the turning off time was fixed to be 30 ms, the following refreshing periods were required to obtain the energy resolution within 2.5%; below 10 s at 50°C, below 2 s at 60°C and 0.5 s at 70°C. However, a frequent refreshing caused the increase of the dead time. Then both the refreshing period and the pulsed off time were shortened. As a result, even at 70 °C, both the energy resolution within 2.5% and the dead time of 1% were found to be compatible. This implies the detectors can be used in the wide temperature range.
Keywords :
cadmium compounds; indium; platinum; polarisation; semiconductor counters; In-CdTe-Pt; bias voltage; depolarization method; diode detector; energy resolution; high temperature condition; polarization effect; spectral performance; temperature 50 degC to 70 degC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location :
Anaheim, CA
ISSN :
1082-3654
Print_ISBN :
978-1-4673-2028-3
Type :
conf
DOI :
10.1109/NSSMIC.2012.6551962
Filename :
6551962
Link To Document :
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