Title :
Properties of alloyed AuGeNi-contacts on GaAs/GaAlAs-heterostructures
Author :
Jucknischke, D. ; Buhlmann, H.J. ; Ilegems, M. ; Jeckelmann, B. ; Schwitz, W.
Author_Institution :
Inst. for Micro- & Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
Abstract :
The technique of contacting GaAs/AlGaAs heterostructures using an evaporated AuGeNi alloy has been refined with emphasis on optimum contact properties in the quantum Hall regime. The resistance of the electrical contacts to two-dimensional electron gas has been measured in various heterostructures with two different methods. The results of the first method using a transmission line and the second one using the quantum Hall effect as well as the good time and thermal cycling stabilities obtained demonstrate the high quality of the contacts. The contact resistance in the quantum Hall regime is found to be lower than 1 Omega .<>
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; electric resistance measurement; electrical contacts; electron gas; gallium arsenide; germanium alloys; gold alloys; nickel alloys; p-n heterojunctions; quantum Hall effect; semiconductor-metal boundaries; 1 ohm; GaAs-GaAlAs; contact resistance; electrical contacts; evaporated AuGeNi alloy; heterostructures; optimum contact; quantum Hall effect; semiconductor; thermal cycling stabilities; transmission line; two-dimensional electron gas; Contact resistance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; Magnetic field measurement; Nickel alloys; Ohmic contacts; Transmission line measurements; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location :
Ottawa, Ontario, Canada
DOI :
10.1109/CPEM.1990.110049
