Title :
Drift time dependent interaction depth correction in Coplanar Grid detectors
Author :
Disch, C. ; Fauler, A. ; Zwerger, A. ; Dambacher, M. ; Balbuena, J.P. ; Fiederle, M.
Author_Institution :
Freiburger Materialforschungszentrum, Freiburg, Germany
fDate :
Oct. 27 2012-Nov. 3 2012
Abstract :
We present a novel method which uses hole drift times in Coplanar Grid detectors to determine the interaction depth and identify multi-hit events. Theoretical considerations in chapter II explain the method, furthermore a simple simulation is introduced. Chapter III introduces a modified Coplanar Grid detector. Chapters IV and V show and discuss experimental results regarding the drift time dependent depth correction.
Keywords :
II-VI semiconductors; cadmium compounds; hole mobility; semiconductor counters; tellurium compounds; wide band gap semiconductors; zinc compounds; CdZnTe; coplanar grid detector; drift time dependent interaction depth correction; hole drift time; multihit event identification;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4673-2028-3
DOI :
10.1109/NSSMIC.2012.6551974
