DocumentCode
2563501
Title
Drift time dependent interaction depth correction in Coplanar Grid detectors
Author
Disch, C. ; Fauler, A. ; Zwerger, A. ; Dambacher, M. ; Balbuena, J.P. ; Fiederle, M.
Author_Institution
Freiburger Materialforschungszentrum, Freiburg, Germany
fYear
2012
fDate
Oct. 27 2012-Nov. 3 2012
Firstpage
4271
Lastpage
4275
Abstract
We present a novel method which uses hole drift times in Coplanar Grid detectors to determine the interaction depth and identify multi-hit events. Theoretical considerations in chapter II explain the method, furthermore a simple simulation is introduced. Chapter III introduces a modified Coplanar Grid detector. Chapters IV and V show and discuss experimental results regarding the drift time dependent depth correction.
Keywords
II-VI semiconductors; cadmium compounds; hole mobility; semiconductor counters; tellurium compounds; wide band gap semiconductors; zinc compounds; CdZnTe; coplanar grid detector; drift time dependent interaction depth correction; hole drift time; multihit event identification;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location
Anaheim, CA
ISSN
1082-3654
Print_ISBN
978-1-4673-2028-3
Type
conf
DOI
10.1109/NSSMIC.2012.6551974
Filename
6551974
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