• DocumentCode
    2563542
  • Title

    Crystal anisotropy of elastoresistance effect of semiconductive piezoresistor and its application to transducers

  • Author

    Toriyama, Toshiyuki ; Sugiyama, Srcsumu

  • Author_Institution
    Fac. of Sci. & Eng., Ritsumeikan Univ., Kyoto, Japan
  • fYear
    1998
  • fDate
    25-28 Nov 1998
  • Firstpage
    183
  • Lastpage
    188
  • Abstract
    An explicit equation which describes the strain-resistance relation, so-called elastoresistance, has been derived by means of piezoresistance and elastic coefficients. Typical examples of elastoresistance coefficients for p-Si have been calculated and illustrated as a function of crystal orientations in the principal crystal planes. The strain sensitivity of semiconductive piezoresistor and its dependence on the crystal orientation has been obtained from the illustration. As examples, a single transducer for a biaxial strain measurement and shear strain transducer have been explained. The optimum crystal plane and orientation for this purpose have been discussed
  • Keywords
    elemental semiconductors; piezoelectric semiconductors; piezoelectric transducers; piezoresistance; piezoresistive devices; silicon; Si; biaxial strain measurement; crystal anisotropy; crystal orientations; elastic coefficients; elastoresistance effect; semiconductive piezoresistor; shear strain transducer; strain-resistance relation; Anisotropic magnetoresistance; Capacitive sensors; Conductivity; Crystallography; Equations; Page description languages; Piezoresistance; Strain measurement; Tensile stress; Transducers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micromechatronics and Human Science, 1998. MHS '98. Proceedings of the 1998 International Symposium on
  • Conference_Location
    Nagoya
  • Print_ISBN
    0-7803-5130-4
  • Type

    conf

  • DOI
    10.1109/MHS.1998.745779
  • Filename
    745779