A novel poly-Si thin-film transistor with multi-trenched body by using Isotropic-etching for Suppressing Off-State Leakage

Author

Chiu, Hsien-Nan ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Po-Hiesh Lin ; Chang, Tzu-Feng ; Sun, Chih-Hung ; Kuo, Chih-Hao ; Chen, Hsuan-Hsu

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ. (NSYSU EE), Kaohsiung, Taiwan

fYear

2009

fDate

18-20 May 2009

Firstpage

177

Lastpage

179

Abstract

In this study, we propose a novel polysilicon thin-film transistor with multi-trenched body (MTB TFT). According to the ISE-TCAD simulations, our proposed MTB TFT gets a steep subthreshold swing (S.S.), a reduced drain-induced barrier lowering (DIBL), a lower drain off-state leakage, and a higher I_ON/I_OFF ration, in comparison with a conventional poly-Si TFT. In addition, due to the MTB scheme, the thermal stability is significantly improved which is a major advantage over the conventional TFT structure.

Keywords

etching; thermal stability; thin film transistors; drain-induced barrier lowering; isotropic etching; multitrenched body polysilicon thin film transistor; off-state leakage; subthreshold swing; thermal stability; Active matrix liquid crystal displays; Amorphous materials; Anisotropic magnetoresistance; Fabrication; Helium; Intrusion detection; Leakage current; Sun; Thermal stability; Thin film transistors; Polysilicon thin-film transistor with multi-trenched body (MTB poly-Si TFT); drain-induced barrier lowering; thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on

Conference_Location

Austin, TX

Print_ISBN

978-1-4244-2933-2

Electronic_ISBN

978-1-4244-2934-9

Type

conf

DOI

10.1109/ICICDT.2009.5166290

Filename

5166290