Title :
Embedded Nonvolatile Memory technology
Author_Institution :
Freescale Semicond., Austin, TX, USA
Abstract :
This paper discusses the optimization of embedded nonvolatile memories (NVMs) for today´s semiconductor applications. Process, design and device technology for embedded NVMs are surveyed, with a focus on bit cell selection, program/erase techniques, and emerging trends in the industry. Split-gate cells employing source-side programming, along with the use of nitride or nanocrystal charge storage, are shown to be good choices for an increasingly broad set of eNVM applications.
Keywords :
embedded systems; random-access storage; bit cell selection; design technology; device technology; embedded nonvolatile memory; erase technique; nanocrystal charge storage; nitride charge storage; process technology; program technique; semiconductor application; source-side programming; split-gate cells; Automotive engineering; Circuits; Costs; Hot carriers; Logic; Manufacturing; Microcontrollers; Nonvolatile memory; Portfolios; Split gate flash memory cells; Embedded NVM; source-side programming; split gate bit cell;
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
DOI :
10.1109/ICICDT.2009.5166292
