Title :
Evanescent wave coupling in hybrid III–V/SOI nanolaser
Author :
Bazin, A. ; Halioua, Y. ; Karle, T. ; Monnier, P. ; Roelkens, G. ; Sagnes, I. ; Raj, R. ; Raineri, F.
Author_Institution :
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis, France
Abstract :
Heterogeneous integration of III-V semiconductor compounds on SOI is one of the key technologies for next generation on chip optical interconnects. The use of photonic crystals nanolasers, within this context, represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we study the evanescent wave coupling occurring between the nanolasers and a subjacent Si wire and demonstrate that more than 90% of the light is funneled into the Si circuitry.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; nanophotonics; photonic crystals; quantum well lasers; silicon-on-insulator; III-V semiconductor compounds; InGaAsP-InGaAs; SOI nanolaser; Si-SiO2; evanescent wave coupling; heterogeneous integrated system; nanocavity; on-chip optical interconnects; photonic crystals nanolasers; quantum wells; ultrafast optical response; wire waveguide; Cavity resonators; Couplings; Laser excitation; Optical waveguides; Silicon on insulator technology; Waveguide lasers; Wires;
Conference_Titel :
Transparent Optical Networks (ICTON), 2011 13th International Conference on
Conference_Location :
Stockholm
Print_ISBN :
978-1-4577-0881-7
Electronic_ISBN :
2161-2056
DOI :
10.1109/ICTON.2011.5971135
