A monolithic 60 GHz diode mixer in FET compatible technology

Author

Adelseck, B. ; Colquhoun, A. ; Dieudonne, J.M. ; Ebert, G. ; Selders, J. ; Schmegner, K.E. ; Schwab, W.

Author_Institution

AEG AG, Ulm, West Germany

fYear

1989

fDate

13-15 June 1989

Firstpage

99

Abstract

A GaAs-technology using a combination of implantation and MOCVD (metal-organic chemical vapor deposition) has been developed that allows the fabrication of Schottky mixer diodes (f/sub T/ approximately=2300 GHz), varactor diodes, and MESFETs (f/sub max/=70 GHz) on the same chip. This allows the production of millimeter-wave mixers with integrated local oscillator and intermediate frequency amplifier. A 60-GHz mixer chip, designed and fabricated using this technology, shows a conversion loss of 6.0 dB and a double sideband noise figure of 3.3 dB.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; Schottky-barrier diodes; chemical vapour deposition; mixers (circuits); solid-state microwave circuits; varactors; 3.3 dB; 6.0 dB; 60 GHz; FET compatible technology; GaAs; MESFETs; MOCVD; Schottky mixer diodes; conversion loss; diode mixer; double sideband noise figure; implantation; integrated local oscillator; intermediate frequency amplifier; millimeter-wave mixers; varactor diodes; Chemical technology; Chemical vapor deposition; FETs; Fabrication; MESFETs; MOCVD; Mixers; Production; Schottky diodes; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38679

Filename

38679