DocumentCode :
2563690
Title :
Dynamic cache resizing architecture for high yield SOC
Author :
Mohammad, Baker ; Rab, Muhammad Tauseef ; Mohammad, Khadir ; Suleman, M. Aater
Author_Institution :
Qualcomm Inc., San Diego, CA, USA
fYear :
2009
fDate :
18-20 May 2009
Firstpage :
211
Lastpage :
214
Abstract :
Dynamic cache resizing coupled with built in self test (BIST) is proposed to enhance yield of SRAM-based cache memory. BIST is used as part of the power-up sequence to identify the faulty memory addresses. Logic is added to prevent access to the identified locations, effectively reducing the cache size. Cache resizing approach can solve for as many faulty locations as the end user would like, while trading off on performance. Reliability and long term effect on memory such as pMOS NBTI issue is also compensated for by running BIST and implementing cache resizing architecture, hence detecting faults introduced over time. Since memory soft failures are worst at lower voltage operation dynamic cache resizing can be used to tradeoff power for performance. This approach supplements existing design time optimizations and adaptive design techniques used to enhance memory yield. Performance loss incurred due to the cache reduction is determined to be within 1%.
Keywords :
SRAM chips; built-in self test; cache storage; logic design; system-on-chip; BIST; SOC design; SRAM-based cache memory; built-in self test; dynamic cache resizing architecture; pMOS NBTI; system-on-chip; Automatic testing; Built-in self-test; Cache memory; Design optimization; Fault detection; Fault diagnosis; Logic; Niobium compounds; Titanium compounds; Voltage; SOC design; caches; high yield; memory architecture; processors design; sram memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
Type :
conf
DOI :
10.1109/ICICDT.2009.5166298
Filename :
5166298
Link To Document :
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