DocumentCode :
2563716
Title :
The non-linear behavior of the Nothing On Insulator NOI nanotransistor from theoretical and numerical studies
Author :
Ravariu, C. ; Rusu, A.
Author_Institution :
ETTI, Politeh. Univ. of Bucharest, Bucharest, Romania
Volume :
2
fYear :
2011
fDate :
17-19 Oct. 2011
Firstpage :
357
Lastpage :
360
Abstract :
A brief presentation of the NOI - Nothing On Insulator - nanotransistor, followed by two theoretical points of view concerning the NOI-FET non-linearity are presented in this paper. The main target is to prove the NOI nanotransistor affiliation to the FETs family, monitoring the gate-control on the drain current. The drain current is activated by the VDS voltage under tunneling conditions. The gate terminal modulates the carriers concentration and consequently the drain current flow. Secondary, a new model parameter comes to complete the NOI-FET theory. The third order derivative was used for the extraction of a threshold drain-source voltage that splits the work domain in two conduction regions: weak and strong.
Keywords :
field effect transistors; nanoelectronics; NOI nanotransistor affiliation; NOI-FET nonlinearity; NOI-FET theory; drain current; nonlinear behavior; nothing on insulator nanotransistor; threshold drain-source voltage; Electric potential; FETs; Films; Logic gates; Neodymium; Silicon; Threshold voltage; FETs; Semiconductor device modeling; Thin film devices; carriers modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2011 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-61284-173-1
Type :
conf
DOI :
10.1109/SMICND.2011.6095816
Filename :
6095816
Link To Document :
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