Title :
Turn-off failure mechanism in large area IGCTs
Author :
Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Wikström, Tobias ; Nistor, Iulian
Author_Institution :
Eng. Dept., Univ. of Cambridge, Cambridge, UK
Abstract :
The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer.
Keywords :
thyristors; dynamic avalanche current distribution; inductive switching conditions; integrated gate commutated thyristors; large area IGCT; turn-off failure mechanism; Anodes; Cathodes; Current density; Integrated circuit modeling; Load modeling; Logic gates; Thyristors; Integrated Gate Commutated Turn-off Thyristor; Large Area SOA;
Conference_Titel :
Semiconductor Conference (CAS), 2011 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-61284-173-1
DOI :
10.1109/SMICND.2011.6095817
