MOS saturation model based on channel resistance

Actual MOS transistors models only use empirical models for the variation of the drain current in saturation. This is due to the bidimensional character of the MOS transistor channel. Gradual approximation can no longer be used for the whole transistor analysis due to the channel length modulation. But the gradual approximation still stands for the effective channel length of the transistor. And this gives a good hint to where an analytical model for saturation could have its roots. This paper proposes to present one such analytical model based on experimental data and on a determined constant channel resistance ratio.