Title :
One-transistor bistable-body tunnel SRAM
Author :
Karda, Kamal ; Brockman, Jay ; Sutar, Surajit ; Seabaugh, Alan ; Nahas, Joseph
Author_Institution :
Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
A one-transistor tunnel SRAM cell is proposed and analyzed. The new cell uses the bistability of a tunnel diode pair to latch the body voltage of a MOSFET which then shifts the threshold voltage and enables sensing of the state by measurement of the MOS transistor current. Band-to-band tunneling is used to write the cell.
Keywords :
MOSFET; SRAM chips; tunnel diodes; MOS transistor current; MOSFET; band-to-band tunneling; bistability; bistable-body tunnel SRAM; body voltage; metal-oxide-semiconductor field effect transistors; one-transistor tunnel SRAM cell; static random access memory; threshold voltage; tunnel diode pair; Capacitors; Current measurement; Diodes; Leakage current; MOSFET circuits; Power dissipation; Random access memory; Subthreshold current; Threshold voltage; Tin; SRAM; TSRAM; static random access memory; tunnel diode;
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
DOI :
10.1109/ICICDT.2009.5166303
