Electrical properties of thermally annealed CdS thin films obtained by chemical bath deposition

Author

Scortescu, D. ; Maticiuc, N. ; Nicorici, V. ; Spalatu, N. ; Potlog, Tamara ; Hiie, J. ; Valdna, V.

Author_Institution

Phys. Dept., Moldova State Univ., Chisinau, Moldova

Volume

2

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

455

Lastpage

458

Abstract

Electrical conductivity and the Hall-effect are investigated in the temperature interval (80-400) K on thermally annealed in H₂ CdS thin films obtained by chemical bath deposition. Different characters of the temperature dependence of conductibility are observed in the CdS films annealed at different temperatures. The Hall measurements allow calculating the values of the N_A, N_D, n_ex and E_D. According to Hall measurements the CdS films show several donor levels at different energetic depths in dependence of the annealing temperature. The sample annealed at high temperatures than 350°C proves to be compensated with a sharply decreasing electrical conductivity with the temperature decrease.

Keywords

Hall effect; II-VI semiconductors; annealing; cadmium compounds; electrical conductivity; high-temperature effects; impurity states; liquid phase deposition; semiconductor growth; semiconductor thin films; wide band gap semiconductors; CdS; Hall-effect; chemical bath deposition; donor levels; electrical conductivity; electrical properties; energetic depths; temperature 80 K to 100 K; thermal annealing; thin films; Annealing; Conductivity; Films; Impurities; Temperature; Temperature dependence; Temperature measurement; CBD method; CdS thin films; Hall coefficient; conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095845

Filename

6095845