A Fully Integrated SiGe BiCMOS Power Amplifier for 2.4GHz Wireless-LAN Application

Author

Ruan, Ying ; Chen, Lei ; Tian, Liang ; Liu, Yan-Hua ; Lai, Zong-sheng

Author_Institution

Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China

fYear

2010

fDate

23-25 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

A 2.4GHz power amplifier (PA) for Wireless-LAN application is designed and implemented in 0.18μm SiGe BiCMOS technology. Without any off-chip component or band wire for matching, the proposed power amplifier is fully integrated, which has a two-stage structure with temperature-insensitive biasing circuit to improve the linearity with almost no increase in die area. S parameter simulation results show that input impedance matching S11 and output impedance matching S22 is less than -13dB and -20dB respectively. The power amplifier has a power gain of 27.3dB, output 1dB compression point of 23.2dBm, and a power added efficiency(PAE) of 21.3%.The area of the die is 1148×1140μm² with all elements integrated on a single chip.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; S-parameters; UHF power amplifiers; impedance matching; wireless LAN; S parameter; SiGe; UHF power amplifier; biasing circuit; frequency 2.4 GHz; fully integrated SiGe BiCMOS power amplifier; gain 27.3 dB; impedance matching; size 0.18 mum; wireless LAN; BiCMOS integrated circuits; Linearity; Power amplifiers; Power generation; Power transistors; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications Networking and Mobile Computing (WiCOM), 2010 6th International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-3708-5

Electronic_ISBN

978-1-4244-3709-2

Type

conf

DOI

10.1109/WICOM.2010.5601201

Filename

5601201