DocumentCode :
2564543
Title :
Product introduction of GaAs multiplex ICs in a Gb/s fiber link transmission system
Author :
McDermott, T.C.
Author_Institution :
Rockwell Int., Dallas, TX, USA
fYear :
1988
fDate :
6-9 Nov. 1988
Firstpage :
7
Lastpage :
10
Abstract :
A successful application of GaAs MSI standard-cell ICs (integrated circuits) has been demonstrated in a lightwave transmission system that has been in production for well over a year. Specifically, a two-chip GaAs chip set was designed, modified, and validated for operation in a lightwave transmission system over the commercial equipment temperature range of 0-70 degrees C. One IC is used as a 12:1 multiplexer and retime element in a 1.13-Gb/s optical transmitter, while the second contains a data-slicer, clock recovery phase detector, and 1:12 demultiplexer for the companion 1.13-Gb/s optical receiver. The author presents a case study of the program-related experiences of designing and integrating GaAs circuits into a production system. An overview of the program timing and scheduling, design analysis and reviews, relevant design cycle times, simulation checkpoints, and the relationship of system requirements to device partitioning is given.<>
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; optical communication equipment; 0 to 70 C; 1.13 Gbit/s; GaAs; MSI standard-cell ICs; clock recovery phase detector; commercial equipment temperature range; data-slicer; demultiplexer; design analysis; design cycle times; device partitioning; fiber link transmission system; lightwave transmission system; multiplexer; optical receiver; overview; program timing; scheduling; semiconductors; simulation checkpoints; system requirements; two-chip GaAs chip set; Application specific integrated circuits; Clocks; Gallium arsenide; Multiplexing; Optical fiber devices; Optical transmitters; Phase detection; Photonic integrated circuits; Production systems; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
Type :
conf
DOI :
10.1109/GAAS.1988.11011
Filename :
11011
Link To Document :
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