Development of large-area ECR plasma source for the deposition of copper metallization

Summary form only given. Deposition of continuous and conformal copper seed layer for metallization of very large-scale integration (VLSI) fabrication using an electron cyclotron resonance (ECR) plasma source with DC sputter has been studied. As an ECR plasma source, permanent magnets (PM)-embedded Lisitano antenna (Ø378 mm) which can be made independently of the wavelength¹ could be used. It was operated in the pressure range of 0.2 to 1.5 mTorr and power range of 500 to 2000 W. The argon plasma has been observed to have an electron density of ~5×10¹⁰ cm^-3 and electron temperature of 5 eV for a microwave power of 750 W and gas pressure of 0.5 mTorr. The process parameters were microwave power (500~2000 W), sputter voltage (100~800 V), operating pressure (0.1~0.5 mTorr), chuck bias (0~100W). After that we were analyzed films thickness, uniformity, step coverage, resistivity by SEM, probe station and TEM. Our results show that can be free from problem like overhang effect and poor step coverage compared with conventional method (PVD).