DocumentCode :
2564679
Title :
Direct thermal strain measurements in electronic packages
Author :
Bastawros, Adel F. ; Voloshin, Arkady S.
Author_Institution :
Dept. of Mech. Eng. & Mech., Lehigh Univ., Bethlehem, PA, USA
fYear :
1990
fDate :
6-8 Feb 1990
Firstpage :
25
Lastpage :
32
Abstract :
The fractional fringe moire interferometry full field deformation monitoring technique, which has been successfully implemented for accurate measurement of thermally induced strains in electronic packages, is discussed. Its applicability to thermal stress analysis of microelectronic devices is considered. Illustrative examples of measured thermal strain distributions in devices subjected to steady-state as well as transient thermal loading histories are also discussed. Such distributions are arrived at accurately and realistically. The technique possesses an excellent potential for addressing several reliability problems in microelectronics and becoming a basic strain analysis tool in that arena
Keywords :
light interferometry; moire fringes; packaging; strain measurement; direct thermal strain measurements; electronic packages; fractional fringe moire interferometry; full field deformation monitoring technique; measurement of thermally induced strains; microelectronic devices; reliability problems; steady state thermal loading; strain analysis tool; thermal strain distributions; thermal stress analysis; transient thermal loading; Capacitive sensors; Electronic packaging thermal management; History; Interferometry; Microelectronics; Monitoring; Steady-state; Strain measurement; Thermal loading; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal and Temperature Measurement Symposium, 1990. SEMI-THERM VI, Proceedings., Sixth Annual IEEE
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/STHERM.1990.68485
Filename :
68485
Link To Document :
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