Title :
GaAs molecular beam epitaxy monolithic power amplifiers at U-band
Author :
Hegazi, G. ; Hung, H.-L.A. ; Singer, J.L. ; Phelleps, F.R. ; Cornfeld, A.B. ; Smith, T. ; Bass, J.F. ; Carlson, H.E. ; Huang, H.C.
Author_Institution :
COMSAT Lab., Clarksburg, MD, USA
Abstract :
The design, fabrication, and measurements for 44-GHz-band molecular-beam epitaxy (MBE) monolithic power amplifiers are described. A five-stage balanced amplifier provided a linear gain of 15.1 dB and maximum output power of 500 mW at 42.5 GHz. These results may represent the highest power and gain achieved from a MIMIC (millimeter-wave monolithic integrated circuit) in the 44-GHz band. These amplifiers are suitable for 20/44-GHz satellite communications as well as for phased-array radar applications.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave amplifiers; molecular beam epitaxial growth; power amplifiers; semiconductor growth; 15.1 dB; 42.5 GHz; 44 GHz; 500 mW; GaAs; MBE; MIMIC; U-band; design; fabrication; five-stage balanced amplifier; linear gain; maximum output power; monolithic power amplifiers; phased-array radar applications; satellite communications; Fabrication; Gain; Gallium arsenide; Integrated circuit measurements; MIMICs; Molecular beam epitaxial growth; Power amplifiers; Power generation; Power measurement; Satellite communication;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38703
