A time-domain network analyzer which uses optoelectronic techniques

Author

Webb, K.J. ; Chauchard, E.A. ; Polak-Dingels, P. ; Lee, C.H. ; Hung, H.-L. ; Smith, T.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

217

Abstract

The performance of characterization measurements using time-domain optoelectronic techniques is shown to offer many advantages and to be especially suited for the on-wafer probing of GaAs integrated circuits. A single measurement can provide broadband scattering parameters. Signal generation is achieved by the illumination of a biased picosecond photoconductor with a short optical pulse and sampling by either a photoconductive or electrooptic technique. A comparison of results using both optical sampling techniques and frequency domain measurements is made. Results are presented for example tests performed on a 28-GHz MMIC (monolithic microwave integrated circuit). Reasonable agreement was obtained in the amplitude, with some discrepancy being evident in the phase.<>

Keywords

III-V semiconductors; MMIC; S-parameters; electro-optical devices; gallium arsenide; integrated circuit testing; microwave measurement; network analysers; photoconducting devices; time-domain analysis; 28 GHz; GaAs integrated circuits; MMIC; biased picosecond photoconductor; broadband scattering parameters; electrooptic technique; frequency domain measurements; on-wafer probing; optical sampling techniques; optoelectronic techniques; photoconductive technique; short optical pulse; time-domain network analyzer; Circuit testing; Gallium arsenide; Integrated circuit measurements; MMICs; Optical pulse generation; Photoconductivity; Sampling methods; Scattering parameters; Signal generators; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38704

Filename

38704