DocumentCode
2565092
Title
A novel 4-18 GHz monolithic matrix distributed amplifier
Author
Chu, S.L.G. ; Tajima, Y. ; Cole, J.B. ; Platzker, A. ; Schindler, M.J.
Author_Institution
Raytheon Co., Lexington, MA, USA
fYear
1989
fDate
13-15 June 1989
Firstpage
291
Abstract
The authors describe the design, fabrication, and performance of a 4-18-GHz matrix distributed amplifier. This amplifier incorporates a novel biasing scheme which enables the stages to be connected in cascade at RF frequencies and in cascode for DC biasing, thus conserving current. A gain of 14 dB+or-1.5 dB has been measured over the 4-18-GHz frequency band in a chip area of only 1.9 mm*2.1 mm.<>
Keywords
MMIC; field effect integrated circuits; microwave amplifiers; wideband amplifiers; 14 dB; 4 to 18 GHz; DC biasing; RF frequencies; biasing scheme; cascade connection; cascode connection; chip area; design; fabrication; gain; monolithic matrix distributed amplifier; performance; Broadband amplifiers; Circuits; Distributed amplifiers; FETs; Fabrication; Gain; Radio frequency; Radiofrequency amplifiers; Transmission line matrix methods; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38720
Filename
38720
Link To Document