Title :
Above 8-Gb/s GaAs monolithic flip-flop ICs for very high-speed optical transmission systems
Author :
Ohhata, Masanobu ; Hagimoto, Kazuo ; Kato, Naoki ; Hirayama, Masahiro
Author_Institution :
LSI Lab., NTT, Kanagawa, Japan
Abstract :
A high-speed master-slave T-type flip-flop (T-F/F) IC (integrated circuit) and D-type flip-flop (D-F/F) IC have been developed for very-high-speed optical transmission systems. The maximum operating speed of the T-F/F IC was 10 GHz, and the D-F/F IC operated up to 8 Gb/s. These ICs were realized by applying a recently designed circuit construction, optimized-gate-width FETs, and FG-SAINT (flat gate self-aligned implantation for N/sup +/ layer technology) with a rapid thermal annealing process.<>
Keywords :
III-V semiconductors; digital integrated circuits; field effect integrated circuits; flip-flops; gallium arsenide; integrated circuit technology; optical communication equipment; 10 GHz; 8 Gbit/s; D-type flip-flop; FG-SAINT; GaAs; flat gate self-aligned implantation; master-slave T-type flip-flop; operating speed; optimized-gate-width FETs; rapid thermal annealing; semiconductors; very-high-speed optical transmission systems; Design optimization; FETs; Flip-flops; Gallium arsenide; High speed integrated circuits; High speed optical techniques; Integrated optics; Master-slave; Photonic integrated circuits; Rapid thermal processing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11015
