A large signal nonlinear MODFET model from small signal S-parameters

Author

O´Callaghan, J.M. ; Beyer, J.B.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

347

Abstract

A general technique for predicting the MODFET large signal performance has been developed. The technique is based entirely on experimental data (small signal S-parameters at different biased points) and therefore is independent of the structure of the FET. Software requirements include a program to fit an equivalent circuit to S parameter data; a simple least-square polynomial approximation program; and SPICE for nonlinear time-domain simulations. Hardware requirements are basically limited to a network analyzer to carry out the small-signal S parameter measurements. Measurements at 10 GHz confirm the validity of the model.<>

Keywords

S-parameters; equivalent circuits; high electron mobility transistors; network analysers; semiconductor device models; solid-state microwave devices; SPICE; biased points; equivalent circuit; freq 10 GHz; large signal nonlinear MODFET model; least-square polynomial approximation program; network analyzer; small signal S-parameters; Equivalent circuits; FETs; HEMTs; Intrusion detection; Least squares approximation; MODFET circuits; Piecewise linear approximation; Scattering parameters; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38736

Filename

38736