Title :
An efficient linear statistical FET model
Author :
Petzold, M. ; Purviance, J. ; Potratz, C.
Author_Institution :
Dept. of Electr. Eng., Idaho Univ., Moscow, ID, USA
Abstract :
The commonly used FET model using model parameter statistics is examined and found to be at best a difficult structure for modeling an FET´s performance statistics. A simpler linear statistical model based on principal-component analysis is proposed, which results in uncorrelated model parameters. An example using actual measured GaAs FET data uses just 13 uncorrelated random variables to model the FET´s performance statistics from 1 to 11 GHz.<>
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; 1 to 11 GHz; GaAs; linear statistical FET model; performance statistics; principal-component analysis; random variables; uncorrelated model parameters; Circuit synthesis; Frequency; Integrated circuit yield; Mathematical model; Microwave FETs; Microwave circuits; Parametric statistics; Random variables; Scattering parameters; Statistical distributions;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38743
