Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence

Author

Pospieszalski, M.W.

Author_Institution

Nat. Radio Astron. Obs., Charlottesville, VA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

385

Abstract

A simple wideband noise model of microwave MESFETs (including modulation-doped FETs, high-electron-mobility transistors, etc.) is described and verified at room and cryogenic temperatures. Closed-form expressions for minimum noise temperature, optimum greater impedance, and noise conductance are given in terms of frequency, the elements of FET equivalent circuits, and the equivalent temperatures of intrinsic gate resistance and drain conductance. The model allows prediction of the noise parameters for a broad frequency range from a single frequency measurement of noise parameters.<>

Keywords

Schottky gate field effect transistors; electron device noise; equivalent circuits; high electron mobility transistors; solid-state microwave devices; FET equivalent circuits; MESFETs; MODFETs; cryogenic temperatures; drain conductance; equivalent temperatures; high-electron-mobility transistors; intrinsic gate resistance; minimum noise temperature; noise conductance; noise parameters; single frequency measurement; temperature dependence; wideband noise model; Circuit noise; Cryogenics; Epitaxial layers; FETs; Frequency; HEMTs; MESFETs; MODFET circuits; Temperature; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38745

Filename

38745