DocumentCode
2565467
Title
Class-A GaAs FET power amplifier design for optimizing intermodulation product
Author
Daido, Y. ; Minowa, M. ; Okubo, N.
Author_Institution
Fujitsu Lab. Ltd., Kawasaki, Japan
fYear
1989
fDate
13-15 June 1989
Firstpage
393
Abstract
The intermodulation products of a Class-A GaAs FET amplifier were estimated using harmonic balance techniques. Output back-off and power-added efficiency at any specified D/U ratio are determined under various matching conditions using FETs with different cutoff frequencies. For optimum design of the amplifier, charts are given which show back-off and efficiency at the specified D/U ratio as functions of small-signal gain and ratio of operating frequency to cutoff frequency.<>
Keywords
III-V semiconductors; field effect transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; Class-A; D/U ratio; FET power amplifier; GaAs; cutoff frequencies; harmonic balance techniques; intermodulation product; matching conditions; operating frequency; power-added efficiency; small-signal gain; Design optimization; FETs; Frequency; Gallium arsenide; Impedance; Laboratories; Nonlinear distortion; Power amplifiers; Radiofrequency amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38747
Filename
38747
Link To Document