The design and performance of large signal distributed microwave amplifiers

Author

Sobhy, M.I. ; Castelino, A.J.

Author_Institution

Electron. Eng. Lab., Kent Univ., Canterbury, UK

fYear

1989

fDate

13-15 June 1989

Firstpage

397

Abstract

Large-signal models of microwave power MESFETs have been developed. The models match closely measured DC and RF characteristics of the device. The complete distributed microwave amplifier was simulated using a nonlinear simulation program. Three circuits were built and results show good agreement with predicted performances. Power outputs up to 0.7 W were obtained over the range 2-6 GHz using three MESFETs per circuit. The nonlinear simulation was able to predict the dynamic range, the power gain, and fundamental and harmonic power outputs to a reasonable degree of accuracy.<>

Keywords

Schottky gate field effect transistors; microwave amplifiers; power amplifiers; power transistors; solid-state microwave circuits; 0.7 W; 2 to 6 GHz; DC; RF characteristics; dynamic range; harmonic power outputs; large signal distributed microwave amplifiers; microwave power MESFETs; nonlinear simulation program; power gain; Circuit simulation; Distributed amplifiers; MESFET circuits; MESFET integrated circuits; Microwave amplifiers; Microwave devices; Predictive models; Radio frequency; Radiofrequency amplifiers; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38748

Filename

38748