Title :
Nonlinear charge control DC and transmission line models for GaAs MODFETs
Author :
Huang, D.-H. ; Lin, H.C.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
An improved DC model for a GaAs MODFET (modulation-doped field-effect transistor) is developed which includes a very simple nonlinear charge control model for the two-dimensional electron gas density. The MODFET is modeled as a lossy transmission line for microwave-frequency analysis. The model predictions show a good agreement with experimental results on a 0.3- mu m GaAs MODFET for both the DC characteristics and the 1-26-GHz frequency range.<>
Keywords :
III-V semiconductors; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 0.3 micron; 1 to 26 GHz; DC model; GaAs; MODFET; MODFETs; lossy transmission line; microwave-frequency analysis; modulation-doped field-effect transistor; nonlinear charge control model; two-dimensional electron gas density; Electrons; Epitaxial layers; FETs; Frequency; Gallium arsenide; HEMTs; MODFETs; Predictive models; Propagation losses; Transmission lines;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38754
