Title :
Super low noise AlGaAs/GaAs HEMT with one tenth micron gate
Author :
Kawasaki, H. ; Shino, T. ; Kawano, M. ; Kamei, K.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
Low-noise AlGaAs/GaAs HEMTs (high-electron-mobility transistors) with a 0.1- mu m gate length have been developed. State-of-the-art low noise figures of 0.51 dB and 1.9 dB were obtained at 18 GHz and 40 GHz at room temperature, with associated gains of 10.8 dB and 5.3 dB, respectively. This performance has been achieved by shortening the gate length to 0.1 mu m and also by lowering the gate resistance drastically with a T-shaped gate structure. The effects of gate length and gate resistance on microwave performance are experimentally shown.<>
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; solid-state microwave devices; 0.1 micron; 0.51 dB; 1.9 dB; 10.8 dB; 18 GHz; 40 GHz; 5.3 dB; AlGaAs-GaAs; HEMT; T-shaped gate structure; gate length; gate resistance; low noise figures; microwave performance; Electrical resistance measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Microwave devices; Noise figure; Noise measurement; Semiconductor device measurement; Substrates; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38756
