DocumentCode
2565575
Title
Super low noise AlGaAs/GaAs HEMT with one tenth micron gate
Author
Kawasaki, H. ; Shino, T. ; Kawano, M. ; Kamei, K.
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1989
fDate
13-15 June 1989
Firstpage
423
Abstract
Low-noise AlGaAs/GaAs HEMTs (high-electron-mobility transistors) with a 0.1- mu m gate length have been developed. State-of-the-art low noise figures of 0.51 dB and 1.9 dB were obtained at 18 GHz and 40 GHz at room temperature, with associated gains of 10.8 dB and 5.3 dB, respectively. This performance has been achieved by shortening the gate length to 0.1 mu m and also by lowering the gate resistance drastically with a T-shaped gate structure. The effects of gate length and gate resistance on microwave performance are experimentally shown.<>
Keywords
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; solid-state microwave devices; 0.1 micron; 0.51 dB; 1.9 dB; 10.8 dB; 18 GHz; 40 GHz; 5.3 dB; AlGaAs-GaAs; HEMT; T-shaped gate structure; gate length; gate resistance; low noise figures; microwave performance; Electrical resistance measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Microwave devices; Noise figure; Noise measurement; Semiconductor device measurement; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38756
Filename
38756
Link To Document