Title :
A high efficiency Ka-band monolithic GaAs FET amplifier
Author :
Saunier, P. ; Tserng, H.Q. ; Camilleri, N. ; Bradshaw, K. ; Shih, H.D.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A monolithic three-stage Ka-band GaAs FET power amplifier has been designed and fabricated on MBE (molecular-beam epitaxy)-grown material with a highly doped (8*10/sup 17/ cm/sup -3/) channel. Devices with gate length of 0.25 mu m and gate width of 50 mu m, 100 mu m, and 250 mu m were cascaded. The gate and drain bias networks were also integrated. A maximum small-signal gain of 26 dB was obtained with 4 V on the drain and 0 V on the gate. When biased for large-signal operation, the amplifier was capable of generating 112 mW output power with 16-dB gain and 21.6% power-added efficiency at 34 GHz. It is believed that this is a record efficiency for a GaAs MMIC (microwave monolithic integrated circuit) amplifier at this frequency.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; 0.25 micron; 112 mW; 21.6 percent; 26 to 16 dB; 34 GHz; 50 to 250 micron; EHF; GaAs; GaAs FET power amplifier; Ka-band; MBE; MMIC; SHF; bias networks; gate length; gate width; large-signal operation; molecular-beam epitaxy; output power; power-added efficiency; semiconductors; small-signal gain; three stage amplifier; FETs; Gain; Gallium arsenide; High power amplifiers; MMICs; Molecular beam epitaxial growth; Monolithic integrated circuits; Operational amplifiers; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11018
