A gigahertz cryogenic HEMT pseudorandom number generator chip set

Author

Asada, Yuma ; Kobayashi, Nao ; Hayashi, Teruaki ; Suzuki, M. ; Hidaka, Naoya ; Odani, Kyohei ; Kondo, K. ; Mimura, Takashi ; Abe, Makoto

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1990

fDate

14-16 Feb. 1990

Firstpage

186

Lastpage

187

Abstract

A 1-GHz high electron mobility transistor (HEMT) chip set for a cryogenic pseudorandom number generator subsystem that has enhancement/depletion (ED) direct-coupled FET logic (DCFL) circuits and operates at liquid nitrogen temperature is described. Using HEMT circuitry at cryogenic temperatures has several advantages. The DC characteristics of the HEMT are improved. The resistance of interconnecting metal at 77 K is about one-third that at room temperature. This minimizes interconnection delay, which is defined by the RC time constant, and simplifies the layout of power and ground lines. Heat is removed from the IC by immersing the bare chip in liquid nitrogen. A 32-b pseudorandom number generator for an external unit of a scientific computing system demonstrates the feasibility of the HEMT-IC-based computer operating at 77 K.<>

Keywords

cryogenics; field effect integrated circuits; high electron mobility transistors; integrated logic circuits; random number generation; 1 GHz; 32 bit operation; 77 K; DC characteristics; HEMT chip set; HEMT-IC-based computer; cryogenic temperatures; direct-coupled FET logic; high electron mobility transistor; interconnection delay; liquid nitrogen temperature; pseudorandom number generator; Cryogenics; Delay effects; FETs; HEMTs; Integrated circuit interconnections; Land surface temperature; Logic circuits; MODFETs; Nitrogen; Power system interconnection;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1990. Digest of Technical Papers. 37th ISSCC., 1990 IEEE International

Conference_Location

San Francisco, CA, USA

Type

conf

DOI

10.1109/ISSCC.1990.110188

Filename

110188