Monolithic dual-gate MESFET power amplifiers for Ka-band

Author

Hung, H.-L.A. ; Hegazi, G. ; Peterson, K.E. ; Phelleps, F.R. ; Huang, H.C.

Author_Institution

COMSAT Lab., Clarksburg, MD, USA

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

41

Lastpage

44

Abstract

An MMIC (microwave monolithic integrated circuit) using a dual-gate MESFET (DGMF) for variable-power application in the 33-GHz band has been developed. A single-stage amplifier demonstrated a linear gain of 9.1 dB and a dynamic range of 30 dB. A two-stage balanced amplifier provided a linear gain of 16.5 dB and maximum output power of 25.3 dBm at 33 GHz. Minimal variations in the insertion phase and power-added efficiency of the DGMF as a function of second-gate control also were demonstrated. This device may be suitable for application in phased-array systems for communications satellites and radar systems.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; 33 GHz; 9.1 to 16.5 dB; DGMF; EHF; GaAs; Ka-band; MMIC; dual-gate MESFET power amplifiers; dynamic range; insertion phase; linear gain; output power; phased-array systems; power-added efficiency; second-gate control; semiconductors; single-stage amplifier; two-stage balanced amplifier; variable-power application; Artificial satellites; Communication system control; Dynamic range; Gain; MESFET integrated circuits; MMICs; Monolithic integrated circuits; Power amplifiers; Power generation; Radar applications;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11019

Filename

11019