Title :
An accurate and simple large signal model of HEMT
Author_Institution :
Electromagn. Inst., Denmark Tech. Univ., Lyngby, Denmark
Abstract :
A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid pulse inverter with rise and fall times of 20 ps and 29 ps at 5 Gb/s, respectively, has been built. The accuracy of the model has been verified by obtaining good agreement between the measured and simulated waveforms of the inverter.<>
Keywords :
S-parameters; digital integrated circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 20 ps; 29 ps; 5 Gbit/s; HEMTs; S-parameters; SPICE simulation; computer programs; fall times; high-electron-mobility transistors; hybrid digital ICs; hybrid pulse inverter; large signal model; microwave performance; rise time; waveforms; Circuit simulation; Circuit testing; Computational modeling; Data mining; HEMTs; MESFETs; Oscilloscopes; Pulse inverters; SPICE; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38766
