DocumentCode
2565789
Title
Trends in mixer damage
Author
Glenn, C.M. ; Garver, R.V.
Author_Institution
Harry Diamond Lab., Adelphi, MD, USA
fYear
1989
fDate
13-15 June 1989
Firstpage
475
Abstract
The dynamic damage properties of 74 pairs of 1N23 X-band mixer diodes have been measured using a train of 30 short pulses at a 1-p.p.s. repetition rate. The pulsewidths used were from 25 ns to 1 mu s and the pulse risetimes were less than 2 ns. A first 30- mu J pulse caused a 3-dB degradation of conversion loss. The damage of successive 16- mu J pulses asymptotically approached 3-dB.<>
Keywords
mixers (circuits); semiconductor device testing; semiconductor diodes; solid-state microwave devices; 16 muJ; 1N23; 25 ns to 1 mus; 30 muJ; X-band mixer diodes; conversion loss; dynamic damage properties; pulse risetimes; pulse trains; pulsewidths; Circuit testing; Degradation; Diodes; Displays; Frequency; Laboratories; Power measurement; Pulse measurements; Space vector pulse width modulation; Spectral analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38769
Filename
38769
Link To Document