• DocumentCode
    2565806
  • Title

    Study of fundamental wave injection locking of MM-wave Gunn harmonic oscillator using large signal model of Gunn device

  • Author

    Chen Ning ; Sun Zhong-Liang ; Li Si-Fan

  • Author_Institution
    Dept. of Radio Eng., Southeast Univ., Nanjing, China
  • fYear
    1989
  • fDate
    13-15 June 1989
  • Firstpage
    479
  • Abstract
    The authors present a novel nonlinear mathematical model of a Gunn device based on the device physics. Using this model, they analyzed the fundamental wave injection locking of a harmonic Gunn oscillator. An analytic formula describing the relation between locking bandwidth and the injected power was obtained. An experiment was performed in V-band to verify the theoretical analysis. It is shown that as the injected power increases, the locking bandwidth increases more slowly and tends to a constant.<>
  • Keywords
    Gunn oscillators; harmonic oscillators (circuits); semiconductor device models; MM-wave Gunn harmonic oscillator; V-band; analytic formula; fundamental wave injection locking; injected power; large signal model; locking bandwidth; nonlinear mathematical model; Bandwidth; Electrons; Equivalent circuits; Gallium arsenide; Gunn devices; Injection-locked oscillators; Mathematical model; Poisson equations; Radio frequency; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1989., IEEE MTT-S International
  • Conference_Location
    Long Beach, CA, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1989.38770
  • Filename
    38770