Title :
State-of-the-art performance millimetre wave gallium arsenide Gunn diodes using ballistically hot electron injectors
Author :
Neylon, S. ; Dale, I. ; Spooner, H. ; Worley, D. ; Couch, N. ; Knight, D. ; Ondria, J.
Author_Institution :
Marconi Electron. Devices Ltd., Lincoln, UK
Abstract :
Ballistically hot electron injectors have been designed using a graded gap GaAs/AlGaAs structure and incorporated into the cathode side of a GaAs Gunn diode drift region. Epitaxial material has been grown using MBE (molecular-beam epitaxy) techniques and diodes have been fabricated. RF assessment at 94 GHz has resulted in efficiencies over 2.3% and greater than 50 mW output power, combined with low sideband noise performance and much improved temperature stability.<>
Keywords :
Gunn diodes; III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; 2.3 percent; 50 mW; 94 GHz; Gunn diode drift region; MBE; MM-wave Gunn diodes; RF assessment; ballistically hot electron injectors; efficiencies; graded gap GaAs-AlGaAs structure; low sideband noise performance; output power; temperature stability; Cathodes; Diodes; Electrons; Gallium arsenide; Gunn devices; Molecular beam epitaxial growth; Power generation; Radio frequency; Stability; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38780
