DocumentCode
2566011
Title
Ka-band monolithic broadband LNA modules
Author
Camilleri, N. ; Chye, P.
Author_Institution
Avantek Inc., Folsom, CA, USA
fYear
1989
fDate
13-15 June 1989
Firstpage
533
Abstract
A set of broadband monolithic GaAs metal-semiconductor field-effect transistor (MESFET) low-noise amplifiers (LNAs) has been developed. These Ka-band amplifiers make use of state-of-the-art sub-0.25- mu m MESFET devices. Typical performance for a single-stage LNA using a 75- mu m device is about 5 dB of gain with an average noise figure of 4.5 dB across the 26.5 to 40 GHz band. A two-stage monolithic chip has 10 dB of gain with an average noise figure of 6 dB across the Ka-band.<>
Keywords
MMIC; microwave amplifiers; wideband amplifiers; 26.5 to 40 GHz; GaAs; Ka-band; MESFET; average noise figure; low-noise amplifiers; monolithic broadband LNA modules; two-stage monolithic chip; Broadband amplifiers; Gallium arsenide; Grounding; HEMTs; MESFETs; MIM capacitors; Noise figure; Performance gain; Scattering parameters; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38783
Filename
38783
Link To Document