Title :
FET power performance prediction using a linearized device model
Author_Institution :
Hewlett-Packard, Santa Rosa, CA, USA
Abstract :
An analytic model has been developed which, based on a linearized device model, describes the power output at 1-dB gain compression, optimum load impedance, and load-pull contours of a field-effect transistor (FET) explicitly in terms of device parameters. Applications of the model to practical devices including commercial metal-semiconductor FETs and a 0.25- mu m-gate modulation-doped FET showed agreement with measurements to 40 GHz.<>
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 0.25 micron; 1-dB gain compression; 40 GHz; FET power performance prediction; linearized device model; load-pull contours; metal-semiconductor FETs; modulation-doped FET; optimum load impedance; power output; Equivalent circuits; Impedance; MESFETs; MODFETs; Microwave FETs; Microwave devices; Microwave technology; Performance gain; Predictive models; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38791
