A large signal physical MESFET model for CAD and its applications

Author

Pantoja, R.R. ; Howes, M.J. ; Richardson, J.R. ; Snowden, C.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Leeds Univ., UK

fYear

1989

fDate

13-15 June 1989

Firstpage

573

Abstract

A quasi-state, large-signal metal-semiconductor field-effect transistor (MESFET) circuit model was developed. It is based on a comprehensive quasi-two-dimensional semi classical device physical simulation where its unique formulation and efficiency makes it suitable for the CAD (computer-aided design) of nonlinear MESFET subsystems. A single/two-tone harmonic balance analysis procedure which uses the describing frequency concept was also developed and combined with the MESFET model. Application of the describing frequency concept drastically reduced the complexity of the two-tone excitation problem by transforming it to an equivalent single-tone case. Numerical load-pull contours and intermodulation distortion contours were simulated, and excellent agreement with experimental results was demonstrated.<>

Keywords

Schottky gate field effect transistors; circuit CAD; semiconductor device models; solid-state microwave devices; CAD; equivalent single-tone case; harmonic balance analysis procedure; intermodulation distortion; large signal physical MESFET model; nonlinear MESFET subsystems; quasi-two-dimensional semi classical device; two-tone excitation problem; Application software; Circuit simulation; Computational modeling; Computer simulation; Design automation; FETs; Frequency; Harmonic analysis; Intermodulation distortion; MESFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38792

Filename

38792