Title :
Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization
Author :
Fonder, Jean-Baptiste ; Latry, Olivier ; Temcamani, Farid ; Duperrier, Cedric
Author_Institution :
GPM, Rouen Univ., St. Etienne du Rouvray, France
Abstract :
This paper presents measurement of AlGaN/GaN HEMT temperature with two techniques. Coupling of infrared thermography and electrical characterization of drain current shows good agreement of both techniques. They are complementary and may allow spatial cartography of HEMT channel temperature. By applying these methods to life test and coupling it to physical investigations, we demonstrate that degradations in aged transistors are mainly related to channel temperature.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; infrared imaging; life testing; radar; thermal management (packaging); wide band gap semiconductors; AlGaN-GaN; HEMT temperature; channel temperature estimation; drain current; electrical characterization; infrared thermography; life test; pulsed radar applications; spatial cartography; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Radio frequency; Temperature measurement;
Conference_Titel :
Multimedia Computing and Systems (ICMCS), 2014 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4799-3823-0
DOI :
10.1109/ICMCS.2014.6911421
