25-42 GHz GaAs heterojunction bipolar transistor low phase noise push-push VCOs

Author

Smith, D.M. ; Canyon, J.C. ; Tait, D.L.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

725

Abstract

Two push-push thin-film VCOs (voltage-controlled oscillators) utilizing GaAs-AlGaAs heterojunction bipolar transistors that cover the 25-42 GHz frequency range are presented. Key features of the designs are: greater than 33% continuous tuning bandwidth, SSB phase noise less than -70 dBc/Hz at 100 kHz offset, and better than -90-dBc fundamental spur suppression. Over 10 GHz of tunability has been achieved using this design. It is suggested that this wide tuning range in a single oscillator allows significant size, weight, and power improvements in wideband communication systems.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave oscillators; solid-state microwave circuits; tuning; variable-frequency oscillators; 25 to 42 GHz; EHF; GaAs-AlGaAs; HBT; MM wave circuits; SHF; SSB phase noise; heterojunction bipolar transistor; low phase noise; microwave circuit; push-push VCOs; thin-film; voltage-controlled oscillators; wide tuning range; wideband communication systems; Amplitude modulation; Bandwidth; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Phase noise; Thin film transistors; Tuning; Voltage-controlled oscillators; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38826

Filename

38826