MMIC-compatible 55 mW InP and GaAs 30-40 GHz field controlled TE-oscillators

Author

Lubke, K. ; Scheiber, H. ; Grutzmacher, D. ; Diskus, C. ; Thim, H.

Author_Institution

Inst. of Microelectron., Linz Univ., Austria

fYear

1989

fDate

13-15 June 1989

Firstpage

729

Abstract

It is demonstrated that planar GaAs and InP field-effect-controlled transferred electron device oscillators are attractive MMIC (monolithic microwave integrated circuit) compatible candidates for local oscillator applications at Ka-band and possibly at higher frequencies, as they are not transit-time-limited as conventional transferred electron oscillators and field-effect transistors are. 55-mW 34-GHz InP, 56-mW 29-GHz GaAs, and 39-mW 37-GHz GaAs lateral MMIC-compatible transferred electron oscillators with MESFET injection contacts have been fabricated exhibiting 2.9, 5.3, and 4.9% efficiencies, respectively. Continuous-wave power levels are somewhat lower (30 mW).<>

Keywords

Gunn devices; III-V semiconductors; MMIC; gallium arsenide; indium compounds; microwave oscillators; 2.9 to 5.3 percent; 30 to 40 GHz; 30 to 56 mW; EHF; GaAs; III-V semiconductors; InP; Ka-band; MESFET injection contacts; MM wave operation; MMIC-compatible; TED; field controlled TE-oscillators; local oscillator applications; millimetre wave device; monolithic microwave integrated circuit; transferred electron device oscillators; Application specific integrated circuits; Electrons; Field effect MMICs; Gallium arsenide; Gunn devices; Indium phosphide; Local oscillators; MESFET integrated circuits; Microwave devices; Microwave oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38827

Filename

38827