Title :
CAD for silicon anisotropic etching
Author :
Buser, R. ; de Rooij, N.
Author_Institution :
Inst. of Microtechnol., Neuchatel Univ., Switzerland
Abstract :
A computer program that simulates silicon single crystal etching in KOH is proposed. Starting from a two-dimensional mask the program finds the relevant etching planes and delivers a projected three-dimensional output of the etched structure with the etchtime (etchdepth) as parameter. The program is discussed and sample results are shown
Keywords :
CAD; digital simulation; elemental semiconductors; etching; silicon; CAD; KOH; Si; anisotropic etching; digital simulation; etching planes; etchtime; three-dimensional output; two-dimensional mask; Anisotropic magnetoresistance; Computational modeling; Computer simulation; Crystals; Design engineering; Etching; Micromachining; Predictive models; Shape; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems, 1990. Proceedings, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE
Conference_Location :
Napa Valley, CA
DOI :
10.1109/MEMSYS.1990.110259
